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IRF7799L2TR1PBF - Power MOSFET

Download the IRF7799L2TR1PBF datasheet PDF. This datasheet also covers the IRF7799L2TRPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

Features

  • = 175°C Single Pulse 10msec 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, Source-to-Drain Voltage (V) 1 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 40 VGS(th) , Gate Threshold Voltage (V) Fig11. Maximum Safe Operating Area 6.0 ID, Drain Current (A) 30 5.0 4.0 20 3.0 ID = 250µA 2.0 ID = 1.0mA ID = 1.0A 10 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF7799L2TRPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7799L2TRPBF Power MOSFET
IRF7799L2 Power MOSFET
IRF7799L2PBF Power MOSFET
IRF7700 Power MOSFET
IRF7700GPBF Power MOSFET

Full PDF Text Transcription

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PD - 96266 IRF7799L2TRPbF IRF7799L2TR1PbF RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified l Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ VDSS Qg tot VGS Qgd 39nC RDS(on) 32mΩ@ 10V 250V min ± 30V max 110nC Vgs(th) 4.
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