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PD- 96154A
IRF7757GPbF
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Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Common Drain Configuration Lead-Free Halogen-Free
HEXFET® Power MOSFET VDSS
20V
RDS(on) max (mW)
35@VGS = 4.5V 40@VGS = 2.5V
ID
4.8A 3.8A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de' ! " # Ã2ÃT !Ã2ÃB "Ã2ÃT! #Ã2ÃB! 'Ã2Ã9 &Ã2Ã9 %Ã2Ã9 $Ã2Ã9 & % $
signer with an extremely efficient and reliable device for battery and load management.
IRF7757GPBF Datasheet
