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PD- 96153A
IRF7756GPbF
HEXFET® Power MOSFET
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Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free
VDSS
-12V
RDS(on) max
0.040@VGS = -4.5V 0.058@VGS = -2.5V 0.087@VGS = -1.8V
ID
-4.3A -3.4A -2.2A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
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with an extremely efficient and reliable device for battery and load management.
IRF7756GPBF Datasheet
