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PD- 96152A
IRF7754GPbF
HEXFET® Power MOSFET
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Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free
VDSS
-12V
RDS(on) max
25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V 49mΩ@VGS = -1.8V
ID
-5.4A -4.6A -3.9A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely
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efficient and reliable device for management.
IRF7754GPBF Datasheet
