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IRF7749L2PBF - Power MOSFETs

Description

The IRF7749L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

Features

  • g 8. Typical Capacitance vs. Drain-to-Source Voltage Fig 9. Typical Total Gate Charge vs Gate-to-Source Voltage 4 www. irf. com © 2014 International Rectifier Submit Datasheet Feedback May 6, 2014 IRF7749L2PbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000 100 TJ = 175°C TJ = 25°C 10 TJ = -40°C VGS = 0V 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ID, Drain-to-Source Curr.

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l RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified IRF7749L2PbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS 60V min Qg tot VGS ±20V max Qgd RDS(on) 1.1mΩ@ 10V Vgs(th) 200nC 71nC 2.
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