Description
The IRF7749L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.
Features
- g 8. Typical Capacitance vs. Drain-to-Source Voltage
Fig 9. Typical Total Gate Charge vs Gate-to-Source Voltage
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May 6, 2014
IRF7749L2PbF
ISD, Reverse Drain Current (A)
ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ)
1000
100 TJ = 175°C TJ = 25°C
10 TJ = -40°C
VGS = 0V 1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
ID, Drain-to-Source Curr.