Datasheet Details
| Part number | IRF7749L1TRPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 287.14 KB |
| Description | Power MOSFETs |
| Datasheet |
 IRF7749L1TRPBF Datasheet
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Description
The IRF7749L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.
Features
- e (nC) Fig 9. Typical Total Gate Charge vs Gate-to-Source Voltage February 18, 2013 IRF7749L1TRPbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000 100 TJ = 175°C TJ = 25°C 10 TJ = -40°C VGS = 0V 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ID, Drain-to-Source Current (A) 10000 1000.