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IRF7739L1TRPBF - Power MOSFET

Description

The IRF7739L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

Features

  • te-to-Source Voltage 300 February 13 ,2013 IRF7739L1TRPbF ID, Drain-to-Source Current (A) 1000 TJ = 175°C 100 10000 1000.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF7739L1TRPbF Applications l RoHS Compliant, Halogen Free ‚ l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified Applicable DirectFET Outline and Substrate Outline  SB SC M2 M4 DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) 40V min ±20V max 0.70mΩ@ 10V Qg tot Qgd Vgs(th) 220nC 81nC 2.
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