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IRF7737L2TR1PBF - Power MOSFET

Download the IRF7737L2TR1PBF datasheet PDF. This datasheet also covers the IRF7737L2TRPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.

Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF7737L2TRPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7737L2TRPBF Power MOSFET
IRF7738L2PBF Power MOSFET
IRF7739L1 Power MOSFET
IRF7739L1TRPBF Power MOSFET
IRF7739L2PBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 96414 IRF7737L2TRPbF IRF7737L2TR1PbF • Advanced Process Technology • Optimized for Industrial Motor Drive, DC-DC and • • • • • other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling Repetitive Avalanche Capability for Robustness and Reliability • Lead Free, RoHS Compliant and Halogen Free D DirectFET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 1.5mΩ max. 1.
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