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IRF7504 - Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • ons are shown in millimeters (inches) T E R M IN A L N U M B E R 1 12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D I R E C T IO N N O TE S : 1 . O U TL IN E C O N FO R M S TO E IA -4 81 & E IA -5 4 1. 2 . C O N TR O LL IN G D IM E N S IO N : M IL L IM E TE R . 3 30 . 00 ( 12 . 99 2 ) MA X. 1 4. 4 0 ( . 56 6 ) 1 2. 4 0 ( . 48 8 ) NO T E S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E I A -48 1 & E IA -5 4 1.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7504PBF Power MOSFET
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IRF7501PBF Power MOSFET
IRF7503 Power MOSFET
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Full PDF Text Transcription

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PD - 9.1267G IRF7504 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = -20V RDS(on) = 0.27Ω 3 6 4 5 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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