Datasheet4U Logo Datasheet4U.com

IRF7503 - Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • E R . 33 0.00 (12.992) M AX. 14.40 ( .566 ) 12.40 ( .488 ) NO T ES : 1. CO NT RO LLIN G DIMEN SIO N :.

📥 Download Datasheet

📁 Similar Datasheet

  • IRF750 - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF750A - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF750A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF710 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF710 - N-Channel MOSFET (INCHANGE)
  • IRF710 - N-Channel MOSFET (ART CHIP)
  • IRF710 - Power MOSFET (Vishay)
  • IRF710A - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF710A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF710B - 400V N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 9.1266G IRF7503 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.135Ω 3 6 4 5 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Published: |