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PD - 9.1505B
IRF7316
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Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 3 4 8 7
D1 D1 D2 D2
VDSS = -30V RDS(on) = 0.058Ω
6 5
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
IRF7316 Datasheet
