IRF7313PBF
Description
..
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
TA = 25°C TA = 70°C
Maximum
Units
Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation
TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
- Junction and Storage Temperature Range
30 ± 20 6.5 5.2 30 2.5 2.0 1.3 82 4.0 0.20 5.8 -55 to + 150
W m J A m J V/ ns °C
Thermal Resistance Ratings
Maximum Junction-to-Ambient
Parameter
Symbol
RθJA
Limit
Units
°C/W 10/7/04
IRF7313Pb F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage...
