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IRF6645TRPBF - Power MOSFET

Download the IRF6645TRPBF datasheet PDF. This datasheet also covers the IRF6645PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile.

Key Features

  • IRF6645/TRPbF 1000 100.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6645PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF6643TRPbF DIGITAL AUDIO MOSFET IRF
IRF6644PbF IR MOSFET Infineon
IRF6648PbF Power MOSFET Infineon
IRF6648TRPbF Power MOSFET Infineon
IRF6662PbF Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6645 DirectFET Power MOSFET Typical calues
IRF6645PBF Power MOSFET
IRF6641TR1PBF N-Channel HEXFET Power MOSFET
IRF6641TRPBF N-Channel HEXFET Power MOSFET
IRF6644 DirectFETPower MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRF6645PbF IRF6645TRPbF l RoHS Compliant, Halogen-Free ‚ l Lead-Free (Qualified up to 260°C Reflow)  l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) 100V max ±20V max 28mΩ@ 10V Qg tot Qgd Vgs(th) 14nC 4.8nC 4.0V Applicable DirectFET Outline and Substrate Outline (see p.