Datasheet Details
| Part number | IRF6644 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 247.50 KB |
| Description | DirectFETPower MOSFET |
| Datasheet |
 IRF6644 Datasheet
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General Description
The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
Key Features
- -Drain Diode Forward Voltage 12 5.0 Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) ID = 1.0A 10 4.5 ID = 1.0mA ID = 250µA ID = 150µA ID , Drain Current (A) 8 4.0 6 3.5 4 3.0 2 2.5 0 25 50 75 100 125 150 2.0 -50 -25 0 25 50 75 100 125 150 TA , Ambient Temperature (°C) TJ , Junction Temperature ( °C ) Fig 12. Maximum Drain Current vs. Ambient Temperature 1000 Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 2.8A 3.3A BOTTOM 6.2A TOP.