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IRF6638TRPbF - DirectFET Power MOSFET

Download the IRF6638TRPbF datasheet PDF (IRF6638PbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for directfet power mosfet.

Description

The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

Features

  • Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 150 125 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 150 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltag.

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Note: The manufacturer provides a single datasheet file (IRF6638PbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 97239 IRF6638PbF IRF6638TRPbF www.DataSheet4U.com DirectFET™ Power MOSFET ‚ RoHs Compliant  Typical values (unless otherwise specified) l Lead-Free (Qualified up to 260°C Reflow) VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters 30V max ±20V max 2.2mΩ@ 10V 3.0mΩ@ 4.5V l Low Conduction Losses Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l High Cdv/dt Immunity 30nC 11nC 3.2nC 27nC 18.4nC 1.8V l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l MX Applicable DirectFET Outline and Substrate Outline (see p.
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