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PD - 95476B
IRF5806PbF
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Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free
HEXFET® Power MOSFET VDSS
-20V
RDS(on) max
86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V
ID
-4.0A -3.0A
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium.
IRF5806PbF Datasheet
