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IR02H420 - HIGH VOLTAGE HALF-BRIDGE

Description

The IR02H420 is a high voltage, high speed half bridge.

Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction.

The logic inputs are compatible with standard CMOS or LSTTL outputs.

Features

  • n Output Power MOSFETs in half-bridge configuration n 500V Rated Breakdown Voltage n High side gate drive designed for bootstrap operation n Matched propagation delay for both channels n Independent high and low side output channels n Undervoltage lockout www. DataSheet4U. com n 5V Schmitt-triggered input logic n Half-Bridge output out of phase with HIN Product Summary VIN (max) ton/off trr RDS(on) PD (TA = 25 ºC) 500V 130 ns 270 ns 3.0Ω 2.0W.

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Data Sheet No. PD-6.076 IR02H420 HIGH VOLTAGE HALF-BRIDGE Features n Output Power MOSFETs in half-bridge configuration n 500V Rated Breakdown Voltage n High side gate drive designed for bootstrap operation n Matched propagation delay for both channels n Independent high and low side output channels n Undervoltage lockout www.DataSheet4U.com n 5V Schmitt-triggered input logic n Half-Bridge output out of phase with HIN Product Summary VIN (max) ton/off trr RDS(on) PD (TA = 25 ºC) 500V 130 ns 270 ns 3.0Ω 2.0W Description The IR02H420 is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs.
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