Datasheet4U Logo Datasheet4U.com

IR01D224 - (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE

Download the IR01D224 datasheet PDF. This datasheet also covers the IR01H420 variant, as both devices belong to the same (ir01h(d)xxx) high voltage half bridge family and are provided as variant models within a single manufacturer datasheet.

Description

The IR01H(D)xxx is a high voltage, high speed half bridge.

Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction.

The logic inputs are compatible with standard CMOS or LSTTL outputs.

Features

  • Output Power MOSFETs in half-bridge configuration.
  • 500V rated breakdown voltage.
  • High side gate drive designed for bootstrap.
  • operation Matched propagation delay for both channels Undervoltage lockout 5V Schmitt-triggered input logic Half-Bridge output in phase with HIN Heatsink version (P2) with improved PD Product Summary VIN (max) ton/off trr 250V- 214/224 500V - 420 RDS(on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IR01H420_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IR01D214 (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE
IR01D420 (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE
IR01H214 (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE
IR01H224 (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE
IR01H420 (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE

Full PDF Text Transcription

Click to expand full text
Data Sheet No. PD-6.075-G IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power MOSFETs in half-bridge configuration • 500V rated breakdown voltage • High side gate drive designed for bootstrap • • • • • operation Matched propagation delay for both channels Undervoltage lockout 5V Schmitt-triggered input logic Half-Bridge output in phase with HIN Heatsink version (P2) with improved PD Product Summary VIN (max) ton/off trr 250V- 214/224 500V - 420 RDS(on) Description The IR01H(D)xxx is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction.
Published: |