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NJ1800D - Silicon Junction Field-Effect Transistor

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Datasheet Details

Part number NJ1800D
Manufacturer InterFET
File Size 148.97 KB
Description Silicon Junction Field-Effect Transistor
Datasheet download datasheet NJ1800D Datasheet

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F-44 01/99 NJ1800D Process Silicon Junction Field-Effect Transistor ¥ Ultra Low-Noise Pre-Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C D G Devices in this Databook based on the NJ1800D Process. Datasheet U290, U291 S Die Size = 0.052" X 0.052" All Bond Pads ≥ 0.004" Sq. Substrate is also Gate. www.DataSheet4U.
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