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28F020 - 256K x 8 CMOS FLASH MEMORY

Description

at any time, without notice.

The 28F020 may contain design defects or errors known as errata.

Current characterized errata are available on request.

Features

  •  ±10% VCC Tolerance  Maximum Latch-Up Immunity through EPI Processing ETOX™ Nonvolatile Flash Technology  EPROM-Compatible Process Base  High-Volume Manufacturing Experience JEDEC-Standard Pinouts  32-Pin Plastic Dip  32-Lead PLCC  32-Lead TSOP (See Packaging Spec. , Order #231369) Flash Electrical Chip-Erase  2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µS Typical Byte-Program  4 second Chip-Program 100,000 Erase/Program Cycles High-Performance Read  90 ns Maximu.

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Datasheet Details

Part number 28F020
Manufacturer Intel
File Size 878.81 KB
Description 256K x 8 CMOS FLASH MEMORY
Datasheet download datasheet 28F020 Datasheet

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Full PDF Text Transcription

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E n n n n n n n 12.0 V ±5% VPP 28F020 2048K (256K X 8) CMOS FLASH MEMORY n n n n Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Noise Immunity Features  ±10% VCC Tolerance  Maximum Latch-Up Immunity through EPI Processing ETOX™ Nonvolatile Flash Technology  EPROM-Compatible Process Base  High-Volume Manufacturing Experience JEDEC-Standard Pinouts  32-Pin Plastic Dip  32-Lead PLCC  32-Lead TSOP (See Packaging Spec.
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