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IS61DDPB22M36 - DDR-IIP (Burst of 2) CIO Synchronous SRAMs

This page provides the datasheet information for the IS61DDPB22M36, a member of the IS61DDPB24M18 DDR-IIP (Burst of 2) CIO Synchronous SRAMs family.

Datasheet Summary

Description

The 72Mb IS61DDPB22M36 and IS61DDPB24M18 are synchronous, high-performance CMOS static random access memory (SRAM) devices.

These SRAMs have a common I/O bus.

The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed.

Features

  • 2M x 36 or 4M x 18.
  • On-chip delay-locked loop (DLL) for wide data valid window.
  • Common data input/output bus.
  • Synchronous pipeline read with self-timed late write operation.
  • Double data rate (DDR-IIP) interface for read and write input ports.
  • Fixed 2-bit burst for read and write operations.
  • Clock stop support.
  • Two input clocks (K and K) for address and control registering at rising edges only.
  • Industrial te.

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Datasheet preview – IS61DDPB22M36

Datasheet Details

Part number IS61DDPB22M36
Manufacturer Integrated Silicon Solution
File Size 572.22 KB
Description DDR-IIP (Burst of 2) CIO Synchronous SRAMs
Datasheet download datasheet IS61DDPB22M36 Datasheet
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Full PDF Text Transcription

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72 Mb (2M x 36 & 4M x 18) DDR-IIP (Burs. t of 2) CIO Synchronous SRAMs (2.5 Cycle Read Latency) Advanced Information May 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late write operation. • Double data rate (DDR-IIP) interface for read and write input ports. • Fixed 2-bit burst for read and write operations. • Clock stop support. • Two input clocks (K and K) for address and control registering at rising edges only. • Industrial temperature available upon request. • Two echo clocks (CQ and CQ) that are delivered simultaneously with data. • +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF. • HSTL input and output levels.
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