MQ1270VP - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	MQ1270VP
Manufacturer	Innogration
File Size	508.70 KB
Description	High Power RF LDMOS FET
Datasheet	MQ1270VP Datasheet
Additional preview pages of the MQ1270VP datasheet.

Product details

Description

The MQ1270VP is a 700-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 960 to 1215MHz. Typical long pulse Performance (on innogration wide band test fixture with device soldered): Pulse width:100uS, duty cycle: 10%, Vds = 50 V, Idq = 100 mA, TA = 25 C Freq(MHz) Pin(dBm) Pout(dBm) Pout(W) IDS(A) Gain(dB) 960 46.5

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Excellent thermal stability, low HCI drift.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Document Number: MQ1270VP Preliminary Datasheet V1.0 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 115 Vdc Gate--.

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Published: Aug 5, 2018 |