MQ1090VP - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	MQ1090VP
Manufacturer	Innogration
File Size	536.05 KB
Description	High Power RF LDMOS FET
Datasheet	MQ1090VP Datasheet
Additional preview pages of the MQ1090VP datasheet.

Product details

Description

The MQ1090VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band avionics applications with frequencies 1030/1090MHz. Typical Avionics Performance (on innogration narrow band test fixture with device soldered): Frequency:1030MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C Pulse condition Gp (dB) POUT(W) D@POUT (%) pulse width 100us 14.5 1100 duty cycle 10% 56 pulse width 50u

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Excellent thermal stability, low HCI drift.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Vol.

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Published: Aug 5, 2018 |