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ITCH20210B2E - High Power RF LDMOS FET

Download the ITCH20210B2E datasheet PDF. This datasheet also covers the ITCH20210B2 variant, as both devices belong to the same high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

Description

The ITCH20210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typ

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characterist.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ITCH20210B2-Innogration.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ITCH20210B2E
Manufacturer Innogration
File Size 942.05 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH20210B2E Datasheet

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Full PDF Text Transcription

Click to expand full text
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20210B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 210W, 28V High Power RF LDMOS FETs Description The ITCH20210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20210B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% . Frequency Gp P-1dB P-3dB D@P-3 (MHz) (dB) (dBm) (dBm) (%) 1805  19.2 53.2 54.1 58.5 1842.5 19.0 52.9 53.8 57.9 1880 19.0 52.6 53.6 58.
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