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ITCH18180B4 - High Power RF LDMOS FET

Description

The ITCH18180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1785 to 1880 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typ

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characterist.

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Datasheet Details

Part number ITCH18180B4
Manufacturer Innogration
File Size 954.89 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH18180B4 Datasheet

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH18180B4 Preliminary Datasheet V1.0 1785MHz-1880MHz, 180W, 28V High Power RF LDMOS FETs Description The ITCH18180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1785 to 1880 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH18180B4 Typical Performance of Doherty Demo (On Innogration fixture with device soldered): VDD =28 Volts, IDQMAIN =450 mA, VGPEAK=0.8V, Pulse CW, Pulse Width=20 us, Duty cycle=10% . Freq P-1dB P-3dB D@P-3 Pavg=45dBm WCDMA Signal(1) (MHz) (dBm) (dBm) (%) Gp (dB) D (%) ACPR5M (dBc) 1785 51.0 52.6 58.7 14.6 44.2 -27.0 1795 51.3 52.
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