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SIDC56D170E6 - Fast switching diode

Description

Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.

Features

  • This chip is used for:.
  • 1700V technology, Emitter Controlled.
  • soft, fast switching.
  • power modules and discrete devices.
  • low reverse recovery charge.
  • small temperature coefficient.

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Full PDF Text Transcription

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SIDC56D170E6 Fast switching diode chip in Emitter Controlled -Technology A Features: This chip is used for: • 1700V technology, Emitter Controlled • soft, fast switching • power modules and discrete devices • low reverse recovery charge • small temperature coefficient Applications: • SMPS, resonant applications, C drives Chip Type SIDC56 D170E6 VR IF 1700V 75A Die Size 7.5 x 7.5mm2 Package sawn on foil Mechanical Parameter Raster size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 7.5 x 7.5 56.25 mm 2 5.48 x 5.
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