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SIDC50D60C8 - Fast switching diode

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG A

Features

  • This chip is used for:.
  • 600V Emitter Controlled 3 technology.
  • Power module 70 µm chip.
  • soft, fast switching C.
  • low reverse recovery charge.
  • small temperature coefficient.

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Full PDF Text Transcription

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SIDC50D60C8 Fast switching diode chip in Emitter Controlled 3 -Technology A Features: This chip is used for: • 600V Emitter Controlled 3 technology • Power module 70 µm chip • soft, fast switching C • low reverse recovery charge • small temperature coefficient Applications: • Drives Chip Type SIDC50D60C8 VR IF 600V 200A Die Size 9.2 x 5.44 mm2 Package sawn on foil Mechanical Parameters Raster size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 9.2 x 5.44 50.05 mm2 8.58 x 4.
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