SGB15N60HS
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High Speed IGBT in NPT-technology
- 30% lower Eoff pared to previous generation
- Short circuit withstand time
- 10 µs
- Designed for operation above 30 k Hz
- NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
- -
- - High ruggedness, temperature stable behaviour Pb-free lead plating; Ro HS pliant 1 Qualified according to JEDEC for target applications plete product spectrum and PSpice Models : http://.infineon./igbt/ VCE 600V IC 15A Eoff 200µJ Tj 150°C Marking G15N60HS Package PG-TO-263-3-2
PG-TO-263-3-2 (D²-PAK) (TO-263AB)
Type SGB15N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C
Symbol VCE IC
Value 600 27 15
Unit V A
Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time Power...
