SGB15N60
SGP15N60,
Fast IGBT in NPT-technology
- 75% lower Eoff pared to previous generation bined with low conduction losses
- Short circuit withstand time
- 10 µs
- Designed for:
- Motor controls
- Inverter
- NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
SGB15N60 SGW15N60
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D²-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC)
- plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SGP15N60 SGB15N60 SGW15N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150...
