Datasheet4U Logo Datasheet4U.com

ISZ810P06LM - MOSFET

Description

.

.

.

.

Features

  • P-Channel.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • 100% avalanche tested.
  • Logic Level.
  • Enhancement mode.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

📥 Download Datasheet

Datasheet preview – ISZ810P06LM

Datasheet Details

Part number ISZ810P06LM
Manufacturer Infineon
File Size 1.31 MB
Description MOSFET
Datasheet download datasheet ISZ810P06LM Datasheet
Additional preview pages of the ISZ810P06LM datasheet.

📁 Similar Datasheet

  • ISZ-2510 - single axis MEMS gyroscope (InvenSense)
  • ISZ-500 - Single-Axis Z-Gyro (InvenSense)
  • ISZ-655 - Single-Axis Z-Gyro (InvenSense)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
ISZ810P06LM MOSFET OptiMOSTMPowerTransistor,-60V Features •P-Channel •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •LogicLevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS -60 V RDS(on),max 81 mΩ ID -19.5 A PG-TSDSON-8FL 8 765 567 8 1 2 34 43 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode ISZ810P06LM Package PG-TSDSON-8 FL Marking 810P06L RelatedLinks - Final Data Sheet 1 Rev.2.0,2022-10-10 OptiMOSTMPowerTransistor,-60V ISZ810P06LM TableofContents Description . . . . . . . . .
Published: |