ISZ053N08NM6 - MOSFET

Description

Features

N-channel, normal level.
Very low on-resistance RDS(on).
Excellent gate charge x RDS(on) product (FOM).
Very low reverse recovery charge (Qrr).
Pb-free lead plating; RoHS compliant.
Halogen-free according to IEC61249-2-21.
Ideal for high frequency switching and synchronous rectification.
175° C operating temperature.
High avalanche energy rating Product validation Fully qualified according to JEDEC for Industrial A.

Infineon

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Datasheet Details

Part number	ISZ053N08NM6
Manufacturer	Infineon
File Size	1.32 MB
Description	MOSFET
Datasheet	ISZ053N08NM6 Datasheet
Additional preview pages of the ISZ053N08NM6 datasheet.

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ISZ053N08NM6 MOSFET OptiMOSTM6Power-Transistor,80V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhighfrequencyswitchingandsynchronousrectification •175°Coperatingtemperature •Highavalancheenergyrating Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 5.3 mΩ ID 90 A Qoss 41 nC QG(0V...

Published: Dec 11, 2023 |