ISZ106N12LM6 - MOSFET

Description

Features

N-channel, logic level.
Very low on-resistance RDS(on).
Excellent gate charge x RDS(on) product (FOM).
Very low reverse recovery charge (Qrr).
High avalanche energy rating.
175°C operating temperature.
Optimized for high frequency switching and synchronous rectification.
Pb-free lead plating; RoHS compliant.
Halogen-free according to IEC61249-2-21.
MSL 1 classified according to J-STD-020 Product validatio.

Infineon

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Datasheet Details

Part number	ISZ106N12LM6
Manufacturer	Infineon
File Size	1.34 MB
Description	MOSFET
Datasheet	ISZ106N12LM6 Datasheet
Additional preview pages of the ISZ106N12LM6 datasheet.

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Full PDF Text Transcription

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ISZ106N12LM6 MOSFET OptiMOSTM6Power-Transistor,120V Features •N-channel,logiclevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •MSL1classifiedaccordingtoJ-STD-020 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 120 V RDS(on),max 10.6 mΩ ID 62 A Qoss 37 nC QG(0V...4.5V) 10.

Published: Jul 21, 2023 |