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ISZ75DP15LM - MOSFET

Description

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Features

  • P-Channel.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • 100% avalanche tested.
  • Logic Level.
  • Enhancement mode.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Datasheet preview – ISZ75DP15LM

Datasheet Details

Part number ISZ75DP15LM
Manufacturer Infineon
File Size 1.33 MB
Description MOSFET
Datasheet download datasheet ISZ75DP15LM Datasheet
Additional preview pages of the ISZ75DP15LM datasheet.

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Full PDF Text Transcription

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ISZ75DP15LM MOSFET OptiMOSTMPower-Transistor,-150V Features •P-Channel •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •LogicLevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS -150 V RDS(on),max 750 mΩ ID -5.1 A PG-TSDSON-8FL 8 765 567 8 1 2 34 43 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode ISZ75DP15LM Package PG-TSDSON-8 FL Marking 75DP15L RelatedLinks - Final Data Sheet 1 Rev.2.0,2022-10-13 OptiMOSTMPower-Transistor,-150V ISZ75DP15LM TableofContents Description . . . . . . .
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