ISZ56DP15LM - MOSFET

Description

Features

P-channel, logic level.
Optimized for high and low switching frequency.
Superior thermal resistance.
100% avalanche tested.
Pb-free lead plating; RoHS compliant.
Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	ISZ56DP15LM
Manufacturer	Infineon
File Size	1.33 MB
Description	MOSFET
Datasheet	ISZ56DP15LM Datasheet
Additional preview pages of the ISZ56DP15LM datasheet.

📁 Similar Datasheet

ISZ-2510 - single axis MEMS gyroscope (InvenSense)
ISZ-500 - Single-Axis Z-Gyro (InvenSense)
ISZ-655 - Single-Axis Z-Gyro (InvenSense)

Other Datasheets by Infineon

ISZ019N03L5S - MOSFET
ISZ033N03LF2S - 30V MOSFET
ISZ034N06LM5 - 60V MOSFET
ISZ053N08NM6 - MOSFET
ISZ0602NLS - 80V MOSFET
ISZ0702NLS - MOSFET
ISZ0703NLS - 60V MOSFET
ISZ080N10NM6 - MOSFET

Full PDF Text Transcription

Click to expand full text

ISZ56DP15LM MOSFET OptiMOSTMPower-Transistor,-150V Features •P-channel,logiclevel •Optimizedforhighandlowswitchingfrequency •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS -150 V RDS(on),max 560 mΩ ID -6.7 A Qoss -8.7 nC QG(0V...4.5V) -15.2 nC PG-TSDSON-8FL 8 765 567 8 1 2 34 43 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode ISZ56DP15LM Package PG-TSDSON-8 FL Marking 56DP15L RelatedLinks - Final Data Sheet 1 Rev.2.

Published: Jul 21, 2023 |