Datasheet4U Logo Datasheet4U.com

ISC056N08NM6 - MOSFET

Description

.

.

.

.

Features

  • N-channel, normal level.
  • Very low on-resistance RDS(on).
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low reverse recovery charge (Qrr).
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21.
  • Ideal for high frequency switching and synchronous rectification.
  • 175° C operating temperature.
  • High avalanche energy rating Product validation Fully qualified according to JEDEC for Industrial A.

📥 Download Datasheet

Datasheet preview – ISC056N08NM6

Datasheet Details

Part number ISC056N08NM6
Manufacturer Infineon
File Size 1.33 MB
Description MOSFET
Datasheet download datasheet ISC056N08NM6 Datasheet
Additional preview pages of the ISC056N08NM6 datasheet.

📁 Similar Datasheet

  • ISC-1008 - Surface Mount Wirewound Shielded Inductor (Vishay Siliconix)
  • ISC-1210 - Shielded Inductors (Vishay Siliconix)
  • ISC-1812 - Shielded Inductors (Vishay Siliconix)
  • ISC300 - Universal Precision Isolated MEASUREMENT CHANNEL (Burr-Brown Corporation)
  • ISC3806 - Rotary Encoder (Scantech)
  • ISC5804AT2 - Transistor (Isahaya Electronics Corporation)
  • ISC6053AM1 - TRANSISTOR (Isahaya Electronics)
  • ISC60NM60L - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • ISC7805 - Three Terminal Positive Voltage Regulator (INCHANGE)
  • ISC7812 - Three Terminal Positive Voltage Regulator (INCHANGE)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
ISC056N08NM6 MOSFET OptiMOSTM6Power-Transistor,80V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhighfrequencyswitchingandsynchronousrectification •175°Coperatingtemperature •Highavalancheenergyrating Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 5.6 mΩ ID 88 A Qoss 41 nC QG(0V...
Published: |