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ISC044N15NM6 - MOSFET

Datasheet Summary

Description

1 Maximum ratings 3 T

Features

  • N‑channel, normal level.
  • Very low on‑resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21.
  • MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to JEDEC for Industrial.

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Datasheet Details

Part number ISC044N15NM6
Manufacturer Infineon
File Size 1.29 MB
Description MOSFET
Datasheet download datasheet ISC044N15NM6 Datasheet
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Full PDF Text Transcription

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Public ISC044N15NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 150 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit VDS 150 V RDS(on),max 4.4 mΩ ID 156 A Qoss 163 nC QG 55 nC Qrr (500 A/μs) 137 nC Type/Ordering Code ISC044N15NM6 Package PG‑TSON‑8 PG‑TSON‑8 5 6 7 8 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Marking 04415N6 Related Links ‑ Datasheet https://www.infineon.
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