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IQD063N15NM5CGSC Final datasheet
MOSFET
OptiMOS™ 5 Power‑Transistor, 150 V
Features
• N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • Optimized design for double side cooling • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • Very low reverse recovery charge (Qrr)
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Parameter VDS RDS(on),max ID Qoss QG
Key Performance Parameters
Value
Unit
150
V
6.32
mΩ
151
A
136
nC
48
nC
Type/Ordering Code IQD063N15NM5CGSC
Package PG‑WHTFN‑9
PG‑WHTFN‑9
5 6
78
9
4 3 2 1
Drain Pin 5-8
Gate
*1
Pin 9
Source *1: Internal body diode Pin 1-4
Marking TA
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IQD063N15NM5CGSC Datasheet
