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IPT60T022S7 - 600V MOSFET

Description

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Features

  • allowing the best possible utilization of the power transistor. PG-HSOF-8 1 2 34 5 6 7 8 Tab Tab 8 76 5 4 32 1 Features.
  • CoolMOS™ S7 technology enables lowest RDS(on) in the smallest footprint.
  • Optimized price performance in low-frequency switching.

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Full PDF Text Transcription

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IPT60T022S7 MOSFET 600VCoolMOSªSJS7PowerDevice IPT60T022S7enablesthebestpriceperformanceforlow-frequency switchingapplications.CoolMOS™S7boaststhelowestRdsonvaluesfor anHVSJMOSFET,withadistinctiveincreaseinenergyefficiency.The embeddedTemperaturesensorincreasesjunctiontemperaturesensing accuracyandrobustnesswhilekeepinganeasyandseamless implementation.CoolMOS™S7isoptimizedfor“staticswitching”andhigh currentapplications.Itisanidealfitforsolid-staterelay,circuitbreaker designs,andlinerectificationinSMPSandinvertertopologies.Thenew temperaturesensorenhancesS7features,allowingthebestpossible utilizationofthepowertransistor.
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