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IPT60R035CFD7 - MOSFET

Description

1 Maximum ratings 3 T

Features

  • Ultra‑fast body diode.
  • Low gate charge.
  • Best‑in‑class reverse recovery charge (Qrr).
  • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness.
  • Lowest FOM RDS(on).
  • Qg and RDS(on).
  • Eoss.
  • Best‑in‑class RDS(on) in SMD and THD packages Benefits.
  • Excellent hard commutation ruggedness.
  • Highest reliability for resonant topologies.
  • Highest efficiency with outstanding ease‑of‑use / performance tradeoff.
  • Enabl.

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Datasheet preview – IPT60R035CFD7

Datasheet Details

Part number IPT60R035CFD7
Manufacturer Infineon
File Size 1.32 MB
Description MOSFET
Datasheet download datasheet IPT60R035CFD7 Datasheet
Additional preview pages of the IPT60R035CFD7 datasheet.

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Full PDF Text Transcription

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Public IPT60R035CFD7 Final datasheet MOSFET 600V CoolMOS™ CFD7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 series and is an optimized platform tailored to target soft switching applications such as phase‑shift full‑bridge (ZVS) and LLC. Resulting from reduced gate charge (Qg), best‑in‑class reverse recovery charge (Qrr) and improved turn off behavior CoolMOS™ CFD7 offers highest efficiency in resonant topologies.
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