Datasheet4U Logo Datasheet4U.com

IPT111N20NFD - MOSFET

Description

.

.

.

.

.

Features

  • N-channel, normal level.
  • Fast Diode (FD) with reduced Qrr.
  • Optimized for hard commutation ruggedness.
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPT2601 USB Dedicated Fast-Charging Port Controller FUMAN
IPT2602 USB fast charging port controller ChipSourceTek

Other Datasheets by Infineon

Part Number Description
IPT004N03L MOSFET
IPT007N06N MOSFET
IPT008N06NM5LF 60V MOSFET
IPT009N06NM5 MOSFET
IPT010N08NM5 80V MOSFET

Full PDF Text Transcription

Click to expand full text
IPT111N20NFD MOSFET OptiMOSª3Power-Transistor,200V Features •N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 11.1 mΩ ID 96 A HSOF 12345 678 Tab Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPT111N20NFD Package PG-HSOF-8 Marking 111N20NF RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2016-02-23 OptiMOSª3Power-Transistor,200V IPT111N20NFD TableofContents Description . . . . . . . . . . . . . .
Published: |