Click to expand full text
IPT009N06NM5
MOSFET
OptiMOSTM5Power-Transistor,60V
Features
•100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
0.9
mΩ
ID
427
A
Qoss
181
nC
QG(0V..10V)
171
nC
TOLL Tab
12345 678
Drain Tab
Gate Pin 1
Source Pin 2-8
Type/OrderingCode IPT009N06NM5
Package PG-HSOF-8
Marking 009N06N
RelatedLinks -
Final Data Sheet
1
Rev.2.0,2023-03-27
OptiMOSTM5Power-Transistor,60V
IPT009N06NM5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .