Datasheet4U Logo Datasheet4U.com

IPS12CN10LG - Power-Transistor

Features

  • N-channel, logic level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Datasheet preview – IPS12CN10LG

Datasheet Details

Part number IPS12CN10LG
Manufacturer Infineon
File Size 554.50 KB
Description Power-Transistor
Datasheet download datasheet IPS12CN10LG Datasheet
Additional preview pages of the IPS12CN10LG datasheet.

📁 Similar Datasheet

  • IPS12CN10L - N-Channel MOSFET (INCHANGE)
  • IPS1225-40A - Silicon Controlled Rectifiers (IP Semiconductor)
  • IPS1225-40B - Silicon Controlled Rectifiers (IP Semiconductor)
  • IPS12N03LBG - Power-Transistor (Infineon Technologies)
  • IPS101 - Power Factor Correction Controller (ASIC Advantage)
  • IPS1011 - INTELLIGENT POWER LOW SIDE SWITCH (International Rectifier)
  • IPS1011PBF - INTELLIGENT POWER LOW SIDE SWITCH (International Rectifier)
  • IPS1011R - INTELLIGENT POWER LOW SIDE SWITCH (International Rectifier)
  • IPS1011RPBF - INTELLIGENT POWER LOW SIDE SWITCH (International Rectifier)
  • IPS1011S - INTELLIGENT POWER LOW SIDE SWITCH (International Rectifier)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
OptiMOS®2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP12CN10L G IPS12CN10L G IPS12CN10L G IPP12CN10L G 100 V 12 mW 69 A Package PG-TO220-3 PG-TO251-3-11 Marking 12CN10L 12CN10L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=69 A, R GS=25 W Reverse diode dv /dt dv /dt I D=69
Published: |