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IPS110N12N3G - MOSFET

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet preview – IPS110N12N3G

Datasheet Details

Part number IPS110N12N3G
Manufacturer Infineon
File Size 573.47 KB
Description MOSFET
Datasheet download datasheet IPS110N12N3G Datasheet
Additional preview pages of the IPS110N12N3G datasheet.

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,120V OptiMOS™3Power-Transistor IPD_S110N12N3G DataSheet Rev.2.
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