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IPP114N12N3G - Power-Transistor

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant; halogen free.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription

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OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP114N12N3 G IPP114N12N3 G 120 V 11.
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