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IPP114N12N3 - Power-Transistor

Download the IPP114N12N3 datasheet PDF. This datasheet also covers the IPP114N12N3G variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant; halogen free.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPP114N12N3G-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPP114N12N3 N-Channel MOSFET INCHANGE
IPP110N06LG Power-Transistor Infineon Technologies
IPP110N20N3 N-Channel MOSFET INCHANGE
IPP110N20N3G Power Transistor Infineon Technologies
IPP110N20NA N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPP114N12N3G Power-Transistor
IPP114N03LG Power-Transistor
IPP110N06L Power-Transistor
IPP110N20N3 Power-Transistor
IPP110N20NA Power-Transistor

Full PDF Text Transcription

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OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP114N12N3 G IPP114N12N3 G 120 V 11.
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