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IPP018N10N5 - MOSFET

General Description

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Key Features

  • Ideal for high frequency switching and sync. rec.
  • N-channel, normal level.
  • Optimized for FOMOSS.
  • Very low on-resistance RDS(on).
  • 175°C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPP018N10N5 MOSFET OptiMOSTM5Power-Transistor,100V Features •Idealforhighfrequencyswitchingandsync.rec. •N-channel,normallevel •OptimizedforFOMOSS •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 1.83 mΩ ID 205 A Qoss 213 nC QG 168 nC TO-220-3 tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPP018N10N5 Package PG-TO220-3 Marking 018N10N5 RelatedLinks - Final Data Sheet 1 Rev.2.