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IPP019N06NF2S - 60V Automotive Schottky Diode

Description

1 Maximum ratings 3 T

Features

  • Optimized for wide range of.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IPP019N06NF2S Final datasheet MOSFET StrongIRFET™2 Power‑Transistor, 60 V Features • Optimized for wide range of applications • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Qualified according to JEDEC Standard Table 1 Parameter VDS RDS(on),max ID Qoss QG(0V..10V) Key Performance Parameters Value Unit 60 V 1.9 mΩ 190 A 108 nC 108 nC PG‑TO220‑3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/Ordering Code IPP019N06NF2S Package PG‑TO220‑3 Marking 019N06NS Related Links ‑ Datasheet https://www.infineon.com 1 Revision 2.2 2024‑10‑14 Public StrongIRFET™2 Power‑Transistor, 60 V IPP019N06NF2S Table of Contents Description . . . . . . . . . . . . . . . . . . . .
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