Datasheet4U Logo Datasheet4U.com

IPI12CN10NG - Power-Transistor

Download the IPI12CN10NG datasheet PDF. This datasheet also covers the IPI12CN10N variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 12.4 mW 67 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPI12CN10N-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPI12CN10NG N-Channel MOSFET INCHANGE
IPI12CNE8NG Power-Transistor Infineon Technologies
IPI126N10N3G Power-Transistor Infineon Technologies
IPI100N04S3-03 OptiMOS-T Power-Transistor Infineon Technologies
IPI100N04S4-H2 OptiMOS-T2 Power-Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
IPI12CN10N Power-Transistor
IPI120N04S3-02 Power-Transistor
IPI120N04S4-01 Power-Transistor
IPI120N04S4-02 Power-Transistor
IPI120N06S4-02 Power-Transistor

Full PDF Text Transcription

Click to expand full text
IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 12.
Published: |