Datasheet4U Logo Datasheet4U.com

IPI12CNE8NG - Power-Transistor

Download the IPI12CNE8NG datasheet PDF. This datasheet also covers the IPB-12CNE variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB-12CNE-8.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPI12CN10N Power-Transistor Infineon
IPI12CN10NG Power-Transistor Infineon
IPI12CN10NG N-Channel MOSFET INCHANGE
IPI120N04S3-02 Power-Transistor Infineon
IPI120N04S4-01 Power-Transistor Infineon

Other Datasheets by Infineon

Part Number Description
IPI126N10N3G Power-Transistor
IPI100N04S3-03 OptiMOS-T Power-Transistor
IPI100N04S4-H2 OptiMOS-T2 Power-Transistor
IPI100N06S3-03 Power-Transistor
IPI100N06S3L-03 Power-Transistor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com IPB12CNE8N G IPI12CNE8N G IPD12CNE8N G IPP12CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 85 12.
Published: |