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IPI111N15N3 - Power-Transistor

Download the IPI111N15N3 datasheet PDF. This datasheet also covers the IPI111N15N3G variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant; Halogen free.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPI111N15N3G-InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IPI111N15N3 N-Channel MOSFET INCHANGE
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IPI110N20N3G Power Transistor Infineon Technologies
IPI100N04S3-03 OptiMOS-T Power-Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
IPI110N20N3 Power-Transistor
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IPI100N08N3G Power-Transistor
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IPI120N04S3-02 Power-Transistor

Full PDF Text Transcription

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IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.
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